Computer simulation as a tool for analyzing and optimizing reallife processes management information systems vol. Simulation and synthesis techniques for asynchronous fifo. These devices show the ballistic transport in the current conduction. The behavior of a system that evolves over time is studied by developing a simulation model. Vhdlams implementation of a numerical ballistic cnt model. This paper provides an overview of current types of cntfets and of some compact models. Hence, considering a single walled, semiconducting carbon nanotube as the channel of a cntfet including source, drain, gate electrodes, the. First we simulated a cntfet where a 10,0 cnt is used as channel.
Highperformance carbon nanotube field effect transistors with. Modeling and simulation fundamentals encompasses a comprehensive study of the discipline and is an excellent book for modeling and simulation courses at the upperundergraduate and graduate levels. A simplied introduction to circuit simulation using spice opus. Cntfet basics and simulation, in design and test of integrated systems in na noscale technology, ieee. For simulating the mosfet circuits we used tsmc spice modelbsim3 v3. Analysis of the operational characteristics of cntfet. If you are just starting out, you might want to copy a demo file to your own directory and edit the netlist to create your own circuit. Simulation results we used hspice to obtain the operational characteristics of the cntfet at different device parameters. The cntfet simulation will be carried out by cntfet lab tool of 4, which is an. Carbon nanotube field effect transistor cntfet has a wide scope in the field of nanotechnology. Also, the simulation results, conclude that the cntfetbased proposed dmfps can perform in a wide range of frequency with minimum chip area in compare to the other stateofthe art dmfps and the presented structures have a better fom 2 criterion than the other dmfps for the similar frequency ranges under the same conditions in 32 nm technology. Recently proposed circuitlevel models of carbon nanotube transistor cnt for spicelike simulators suffer from numerical complexities as they rely on numerical evaluation of integrals or internal newtonraphson iterations to find solutions of. Simulation resultsand comparative analysis cntfets can be used as inverter by connecting p type and n type cntfets in series as shown in figure1 9. Simulation and analysis of cntfet based inverter gaurav sapra university institute of engineering and technology u.
A new structure for carbon nanotube field effect transistors cntfets has been proposed recently and its currentvoltage characteristic has been simulated by zoheir kordrostami et. Simulation is a powerful tool if understood and used properly. A model construct a conceptual framework that describes a system. Simulations of carbon nanotube field effect transistors. Using the available models, we simulated and analyzed the influence of the parameters on the device characteristics. It is a 2d fast monte carlo simulator which can take into account all the relevant quantum effects, thank to the implementation of the bohm effective potential method. Implementation of mod16 counter using veriloga model of.
In this paper we present an exhaustive description of the basic types of cntfets. This has led to problems such as an inability to calculate systems that require a large model or a loss of accuracy due to use. Monte carlo simulation, discreteevent simulation, continuous system simulation, mixed continuousdiscreteevent simulation. This deterministic approach has at its core the law of mass action, an empirical law giving a simple relation between. In order to effectively simplify the simulation of cntfet, an accurate numerical model for charge density in cntfets is proposed in this paper based on ballistic transport theory dang, 2006. Simulation and analysis of cntfets based logic gates in. Box 700747, 151 engineers way 601 university drive 6. Spice compatible cnt interconnect and cntfet models in veriloga hardware description language are presented in this paper. Design methodology based on carbon nanotube field e. Leveugle, cntfet basics and simulation, ieee trans. Design and simulate ternary multiplier based cntfet. Generation of artificial history and observation of that observation history a model construct a conceptual framework that describes a system the behavior of a system that evolves over time is studied by developing a simulation model. Modeling and simulation of ntype carbon nanotube field effect transistors using.
Request pdf cntfet basics and simulation this paper provides an overview of current types of cntfets and of some compact models. The selfconsistent potential of cntfet is an important element in determining device current. Tunneling carbon nanotube field effect transistor with. Faculty of technical engineering, fasa branch, islamic azad university, fars, iran.
Since most simulation results are essentially random variables, it may be hard to determine whether an observation is a result of system interrelationships or just randomness. Hspice basics an input netlist file must be created to begin the design entry and simulation process. Cntfets and mosfets is that the channel of the devices is formed by carbon nanotubes cnts instead of silicon, which enables a higher drive current density, due to the larger current carrier. We address the changes and challenges finfets have introduced for circuit design in section 3. A read is counted each time someone views a publication summary such as the title, abstract, and list of authors, clicks on a figure, or views or downloads the fulltext. Ijiima in 1991 while performing some experiments on molecular structure composed of carbonium 1. We present a physical compact model of a dual gate carbon nanotube field effect transistor dg cntfet. Pdf implementation of mod16 counter using veriloga. In this paper, a veriloga formulation of the stanford compact model is used for the simulation of different logic gates in. Cntfet and types of cntfet are discussed in section 2.
Design of universal logic gates based on cntfet for binary and ternary logic 1radha tapiawala, 2rahul kashyap 1,2department of electronics and communication engineering vlsi and embedded system design gujarat technological university, ahmedabad, india and. Blocksets simpowersystems, simmechanics gedaempfte sinusschwingung sine wave product3 product2 product1 mux eu math function 1 gain1. In times to come, greater volumes of data be collected and analyzed than ever before, and the. This paper enumerates the efficient design and analysis of low power cntfet true single phase clock logic d flip flop based shift registers. Section ii describes the carbon nanotube structure and its physical properties. This paper enumerates the efficient design and analysis of ntype cntfet based 2x1 multiplexer. A simulation is the imitation of the operation of realworld process or system over time. A conclusion is that the tube diameter influences not only the current level, but also the threshold voltage of the cntfet, while. The conclusion is that the tube diameter influences not only the current level, but also the. Carbon nano tube cnt and carbon nano tube field effect transistor cntfet carbon nano tube cnt has been considered as one of the most important building blocks in nano devices. In this paper we propose a simulation study to carry out dynamic analysis of cntfetbased digital circuit, introducing in the semiempirical compact model for cntfets. A conclusion is that the tube diameter influences not only the current level, but also the threshold voltage of the cntfet, while the contact resistance influences only the current level. Cntfet basics and simulation request pdf researchgate. The transient and power analysis are obtained with operating voltage at 0.
So, to obtain predictive circuit simulation results, it is mandatory to precisely understand transport phenomena in cntfet at the molecular scale. Design and simulate ternary multiplier based cntfet a. The cntfet is a field effect transistor in which carbon nano tubecnt is used in the. This paper is an introduction to rf simulation methods and how they are applied to make common rf measurements. We have then studied the effect of channel length and chirality on the drain current for planer cntfet. Design of universal logic gates based on cntfet for binary. The value of the simulation approach is that it scales better with analytic complexity, so starting simple may seem like a waste of time. Accurate spice compatible cnt interconnect and cntfet. Design methodology based on carbon nanotube field effect. Archimedes is the gnu package for the design and simulation of submicron semiconductor devices. Metallic cnts are shown to have current saturation characteristics above a threshold voltage and then modelled with piecewise linear functions.
In section 4, we summarize all the challenges from the designers perspective. Lecture notes on simulation and modeling course content. This model has a minimum possible channel length of 10nm and a width of 4nm. In this paper we implement a simple dc model for cntfets already proposed by us in order to carry out static analysis of basic digital circuits. We also discuss the electrical and vi char acteristics of cntfet. Nanotube field effect transistor cntfet is the most promising technology to extent due to three reasons.
Simulation and analysis of cntfets based logic gates in hspice 1neetu sardana, 2l. A tunneling carbon nanotube field effect transistor with asymmetric graded double halo asymgdht cntfet is investigated in order to enhance band to band tunneling and evaluate the device characteristics by nonequilibrium greens function negf method. Design and analysis of low power cntfet tspc d flip flop. Muniraj 1research scholar, department of ece, karpagam university, coimbatore 2principal, tejaa shakthi institute of technology for women, coimbatore. Design of low threshold full adder cell using cntfet. Data analysis and simulation the widespread availability of inexpensive computing power is having a major impact on data analysis.
The simulation approach because the twosample ttest is simple, well rst explore simulation for power for that scenario to compare the simulation approach to the analytic approach. One end of the carbon nanotube which forms the source is put in contact with the metal intrinsically and the other end of the cnt which forms the. A fast, numerical circuitlevel model of carbon nanotube. For this simulation we have kept all other parameters fixed and changed the channel length as well as the top gate length proportionally. Carbon nanotubes field effect transistors cntfets are one of the most promising. The performance of cntfet inverters, bscmig inverters and conventional mosfet inverters. It is an ascii text le created using any text editor. The tspc d flip flop and shift registers are designed using stanford university cntfet model and proposed 10nm cntfet model with sleepy keeper low power technique. Cntfets roberto marani and anna gina perri electronic devices laboratory, electrical and information engineering department, polytechnic university of bari, via e. A simplied introduction to circuit simulation using spice opus 7 figure 2. Dynamic simulation of cntfetbased digital circuits international. This introduction to simulation tutorial is designed to teach the basics of simulation, including structure, function, data generated, and its proper use.
Cntfet and cmos are similar, therefore the cntfet can use the fundaments of cmos design. Generation of artificial history and observation of that observation history. Cntfet is defined as gate to source voltage, which is. Introduction to rf simulation and its application characteristics of rf circuits 4 of 47 the designers guide community 2. Simulation and synthesis techniques for asynchronous fifo design clifford e. Xor has the worstcase karnaugh mapif implemented from simple gates, it requires more transistors than any other function. Comparing stochastic simulation and odes modelling challenges background the modelling of chemical reactions using deterministic rate laws has proven extremely successful in both chemistry and biochemistry for many years. It is also a valuable reference for researchers and practitioners in the fields of computational statistics, engineering, and computer science who. Cntfet is found to be one of the most promising alternatives for mosfet. We used stanford university cntfet model package v221. Design and analysis of ntype cntfet based 2 x 1 multiplexer. Cntfet basics and simulation ieee conference publication. Simulation and analysis of cntfets based logic gates in hspice. The basic assumption here is mosfet like cntfet, where the schottky.
Pass transistor logic often uses fewer transistors, runs faster, and requires less power than the same function implemented with the same transistors in fully complementary cmos logic. Msc in electronic, faculty of technical engineering, fasa branch, islamic azad university, fars, iran 2. Using the available models, the influence of the parameters on the device characteristics was simulated and analyzed. Cntfets carbon nanotube field effect transistors are novel devices that are expected to sustain. The possibility of creating a simulation model in a general programming language is not popular. Section iii presents the cnt fet model and its equivalent circuit and section iv presents the simula tion results of cntfet model using hspice as well as matlab. The multiplexer is designed using ballistic cntfet vhdlams model with the dcnt of 1nm in resistive load inverter logic.